austriamicrosystems Releases Production of 0.18µm High-Voltage CMOS Process Technology “H18″
austriamicrosystems released volume production of its advanced 0.18µm High-Voltage CMOS process technology “H18” which will be manufactured in IBM’s 200mm Burlington wafer facility. Jointly developed with IBM, the 0.18µm High-Voltage CMOS process is the 6th generation of continuously improved High-Voltage CMOS technologies developed at austriamicrosystems.
The new 0.18µm High-Voltage CMOS process offers the highest integration density, up to 118k gates/mm², enabling SoC applications (System-on-Chip) as well as best-in-class power-on resistance (Rdson) which directly results in a silicon area reduction. The integration capabilities of H18 enable design houses and IDMs to create new applications in areas such as smart sensors, sensor interface devices, smart meters, industrial and building controls and LED lighting control. H18 is uniquely positioned to create the next generation of smarter interconnected devices.
Only a few mask level adders are required on top of the fully compatible CMOS base process to implement high-voltage capabilities, making the H18 process one of the most cost competitive 0.18µm High-Voltage CMOS technologies in the market. The process allows the integration of 1.8V, 5V, 20V and 50V devices on a single chip without any process modifications. Process features such as Schottky barrier diode, high-resistive and precision poly, single- and dual metal-insulator-metal (MIM) capacitors, varactors and up to 7 metal layers including thick last metal complete the state-of-the art High-Voltage CMOS process.
More information about H18 CMOS Process Technology can be found at austriamicrosystems Website
<slug>austriamicrosystems’s 0.18µm High-Voltage CMOS Process Technology “H18″</slug>