Fairchild Semiconductor Announces FDFME3N311ZT, Integrated Boost Switch that Provides High Efficiency in Boost Conversion Circuits
The FDFME3N311ZT combines a 30V integrated N-Channel PowerTrench® MOSFET and Schottky diode for exceptionally low input capacitance (55pF typical) and total gate charge (1nC) to improve efficiency in DC-DC boost designs. Designed with Fairchild’s proprietary PowerTrench process technology, it delivers low switching losses through the careful optimization of dynamic characteristics. The FDFME3N311ZT integrates two discrete devices into a compact (1.6mm x 1.6mm) and low-profile (0.55mm) MicroFETâ„¢ thin package, answering the need for compact DC-DC boost designs and offering a 36 percent space savings over prior boost switch products. the FDFME3N311ZT offers a 30V breakdown voltage to drive up to seven or eight white LEDs, depending on the LEDs selected and design guardband. White LEDs are typically used for display backlighting in mobile devices such as cell phones, and are normally connected in a series path to ensure a uniform forward current and brightness for each LED…
FDFME3N311ZT
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