Fairchild Semiconductor Announces FDMC8200, Dual MOSFET Solution that Delivers Higher Efficiency and Power Density for Synchronous Buck Designs

Wed, Jul 8th, 2009. In Reference Design, Semiconductor
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The FDMC8200 integrates an optimized control (high-side) and synchronous (low-side) 30V N-Channel MOSFET into one 3mm x 3mm MLP module – all designed with Fairchild’s advanced-performance PowerTrench(R) 7 MOSFET technology. This technology yields an exceptionally low RDS(ON), total gate charge (QG) and Miller Charge (QGD) – enhancements that result in high efficiency by minimizing conduction and switching losses. The FDMC8200 typically features an RDS(ON) of 24mOhm on the high side and 9.5mOhm on the low side. It can deliver over 9A of current for mainstream computing applications, and the optimized pinout and footprint provides ease of layout and routing, simplifying design…

FDMC8200

FDMC8200
(Photo: Fairchildsemi)


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