Mitsubishi Electric Develops Gallium Nitride High-Electron Mobility Transistor (GaN HEMT) for 4.0 GHz Band Satellite Applications

Sat, Feb 27th, 2010. In Communication, Mobile Devices, Semiconductor

Mitsubishi Electric Corporation developed four models (MGFC50G3742S, MGFC46G3742S, MGFC43G3742S, MGF2633GS) of gallium nitride high-electron mobility transistor (GaN HEMT) for 4.0 GHz band satellite applications, with output ranging from 2W to 100W. With these products, Mitsubishi Electric will become the first company in the world to market GaN HEMTs engineered exclusively for these particular applications. Gallium nitride (GaN) HEMT amplifiers offer higher efficiency, as well as high-filed electron velocity and high breakdown fields. These characteristics help make transmitter devices smaller, lighter and more durable…

GaN-HEMT

GaN HEMT
(Photo: Mitsubishi Electric)

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GaN-HEMT-Specifications

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