MOSAID Technologies Announces HLNAND 256Gb Flash Memory Device
MOSAID Technologies announced that it has engineered a production-ready 256Gb HLNAND™ (HyperLink NAND) Flash memory semiconductor chip. The high-speed, high-density 256Gb MLC (Multi Level Cell) HLNAND MCP (Multi-Chip Package) is optimized for mass storage applications, including enterprise data centers and high-performance computing applications.
“Our 256Gb HLNAND Flash device is one of the fastest, highest-density, best performing Flash memory devices on the market,” said Jin-Ki Kim, Vice President, Research and Development, MOSAID. “By sampling production-ready 256Gb HLNAND devices, we are demonstrating that HLNAND can be manufactured cost-effectively, flexibly and at high yields. We are seeing significant interest in HLNAND because it is a high-performance, point-to-point interface that is scalable to large memory configurations without bandwidth degradation.”
The HLNAND 256Gb Flash memory device is packaged as an MCP composed of a stack of nine dies – eight industry-standard NAND Flash chips, and one MOSAID proprietary ASIC interface chip. The design supports either monolithic 32Gb MLC Toggle Mode or 32Gb MLC legacy asynchronous NAND Flash chips, evenly distributed over four banks. The interface chip contains the external high-speed HyperLink interface and controls each flash bank automatically and independently. The design supports an Error Detection Code (EDC) feature to eliminate bit errors in ‘Command Packets’ to ensure reliability and error-free communication of commands and register data. The device provides user configurable virtual pages for read with the various page depth choices, 2048B, 4096B, 8192B and a full page including extra bits.
HLNAND 256Gb Flash Memory Device
(Photo from MOSAID Website)
More information about HLNAND (HyperLink NAND) Flash memory can be found at MOSAID Technologies Website