NXP Announces BLC7G22L(S)-130 Base Station Power Transistor Gen7 LDMOS Technology

Thu, May 15th, 2008. In Power, Semiconductor

The BLC7G22L(S)-130 Base Station Power Transistor Gen7 LDMOS Technology enables the highest-efficiency LDMOS solutions available today, increasing power density by 20 percent and improving power efficiency by two percent, while reducing the thermal resistance Rth by over 25 percent compared to the previous generation…


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