NXP Semiconductors Announces PSMN1R2-25YL, the World’s First n-Channel sub 1 milliOhm 25V MOSFET

By pur, Friday, July 10th, 2009
Category: Motor, Motion Controller, Semiconductor

The PSMN1R2-25YL is the world’s first n-channel sub 1 milliOhm 25V MOSFET, boasting the lowest ever RDSon and best in class Figure of Merit. This is the lowest ever RDSon MOSFET in a Power-SO8 package (Loss Free package: LFPAK) and is an extension to NXP’s existing MOSFET portfolio. The newest generation MOSFET combines the high performance Power-S08 LFPAK package with latest Trench 6 generation silicon and offers numerous performance and reliability advantages in a wide variety of demanding applications such as: power OR-ring, motor control and high efficiency synchronous buck-regulators. The PSMN1R2–25YL has a typical RDSon of 0.9 mOhm for a 25V part in Power-S08 (LFPAK), and 1.0 mOhm (typical) for a 30V part…

PSMN1R2-25YL

PSMN1R2-25YL
(Photo: NXP)


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