Vishay Intertechnology Expands 45 V TMBS Trench MOS Barrier Schottky Rectifiers

Fri, Jan 21st, 2011. In Power, Semiconductor
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Vishay Intertechnology expanded TMBS® Trench MOS Barrier Schottky rectifiers for solar bypass applications with four new 45 V devices offering eSMP® surface-mount and axial-leaded package options.

The devices are designed to enable higher current densities in low-voltage, high-frequency inverters, and solar cell junction boxes, where they will be used as bypass diodes for photovoltaic solar cell protection.

The V10P45S and 15 A V15P45S are offered in surface-mount SMPC packages with a typical height of 1.1 mm. Designed for automated placement, the SMPC package meets MSL Level 1.

The axial-leaded rectifiers are include the 15 A VSB1545 and 20 A VSB2045 in the P600 package. The devices can handle solder dip temperatures to 275 °C for 10 seconds per JESD 22-B106, and feature a maximum junction temperature of + 150 °C

Samples and production quantities of the new 45 V TMBS rectifiers are available now, with lead times of eight weeks for larger orders.

45 V TMBS Trench MOS Barrier Schottky Rectifiers

45 V TMBS Trench MOS Barrier Schottky Rectifiers
(Photo from Vishay Website)

 

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More information about TMBS Schottky rectifiers can be found at Vishay Intertechnology Website


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