Mitsubishi Electric Corporation developed four models (MGFC50G3742S, MGFC46G3742S, MGFC43G3742S, MGF2633GS) of gallium nitride high-electron mobility transistor (GaN HEMT) for 4.0 ... ... more durable...
GaN HEMT(Photo: Mitsubishi Electric)
Press Release:
Mitsubishi Electric Develops World’s First GaN HEMT Amplifier Exclusive to Satellite Applications
Use of gallium nitride achieves high output of up to 100 W
TOKYO, Mitsubishi Electric Corporation (TOKYO: 6503) announced it has
developed four models of ...
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