Category: Memory page# 1

Memory, including ROM, RAM, EEPROM, DRAM, DDR, external memory (SD-Card, MMC, M2)

Entries summary:

Lattice supports QDR (Quad Data Rate) II/II+ Memory Devices

By Tracie, at Thursday, December 13th, 2007, in Memory, Programmable Logic

The Quad Data Rate II+ memory devices are the latest members of the QDR SRAM memory family and allow data rates above 250 MHz. These new SRAMs are ideal for high-bandwidth, low latency applications. The read and write ports run independently and allow designers to maximize bandwidth without having to worry about the bus contention issues that are typical with other memory devices. The high bandwidth and low latency characteristics of the QDR II+ memories make them ideal for high-bandwidth applications Lattice Semiconductor Corporation (NASDAQ: LSCC) announced industry-leading FPGA-based support for Quad Data Rate (QDR) II/II+ memory devices...

 

533-MHz DDR3 Interface Speeds with Stratix III FPGA - Altera

By Tracie, at Thursday, December 13th, 2007, in Memory, Programmable Logic

Stratix III FPGAs are the only FPGAs designed for fully compliant DDR3 SDRAM DIMM support and the only FPGAs to exceed 533 MHz operation. - David Greenfield, Altera Altera Corporation (NASDAQ: ALTR) announced it has achieved DDR3 memory interface speeds in excess of 1067 Mbps with its Stratix® III FPGAs, providing a 33 percent advantage in memory performance over competing FPGA solutions. This higher memory bandwidth enables new communications, computing and video processing applications that were either previously impossible or required doubling the number of memory banks. Altera's Stratix III FPGA family is the industry's only FPGA to demonstrate full compliance to the JESD79-3 JEDEC DDR3 SDRAM standard, including the performance-critical read/write-leveling specification for maximum system performance...

 

SanDisk Introduces 3-Bit-Per-Cell 16 Gb NAND Flash Memory

By pur, at Thursday, February 7th, 2008, in Development Tool, Memory

  The new 3-Bit-Per-Cell flash architecture has been in development for the past two years and employs SanDisk's most advanced patented design innovations to achieve the same performance and high reliability found in SanDisk's 2-bits-per-cell chips..

 

Toshiba Creates 16-Gigabit NAND Flash Memory with 43nm CMOS Process

By pur, at Saturday, February 9th, 2008, in IC, Chip, SoC, Memory
toshiba-16Gb-flash-memory

  The new 16Gb products have a chip area of 120 square millimeters, about 30 percent less than same density NAND-flash memories jointly developed by Toshiba and SanDisk and fabricated with 56nm process technology..

 

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