The SRAM cell utilizes a conventional six-transistor design and has an area of 0.1um2, breaking the previous SRAM scaling barriers. SRAM cell size is a key technology metric in the semiconductor industry, and this work demonstrates IBM and its partners’ continued leadership in cutting-edge process technology. Key enablers of the SRAM cell include band edge high-K metal gate stacks, transistors with less than 25 nm gate lengths, thin spacers, novel co-implants, advanced activation techniques, extremely thin silicide, and damascene copper contacts…
IBM Builds World’s Smallest SRAM Memory Cell
IBM (NYSE: IBM) and its joint development partners — AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) — announced the first working static random access memory (SRAM) for the 22 nanometer (nm) technology node, the world’s first reported working cell built at its 300mm research facility in Albany, NY. SRAM chips are precursors to more complex devices such as microprocessors.
The New Software designed to optimize the high performance features of its proprietary embedded flash memories: OneNAND[tm], Flex-OneNAND[tm] and moviNAND[tm], in smart phones, using the major mobile operating systems – Windows Mobile(CE), Symbian, Linux, and RTOS (real-time operating system). Samsung’s new software optimizes data transactions within its memory chips as they interact with the operating system. Samsung’s new embedded-flash software is comprised of several file systems and supportive flash drivers. The new embedded flash-optimized software is expected to shorten application design-in times and, as a result, broaden the adoption of advanced embedded-flash solutions, particularly where management of high-speed video images and high-resolution still images is important…
Samsung Introduces Software to Increase Efficiency of Embedded Memory Solutions for Smart Phones
Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, announced that it is introducing software designed to optimize the high performance features of its proprietary embedded flash memories: OneNAND[tm], Flex-OneNAND[tm] and moviNAND[tm], in smart phones, using the major mobile operating systems – Windows Mobile(CE), Symbian, Linux, and RTOS (real-time operating system).
The 32GB embedded NAND flash memory devices offer the largest density yet announced plus full compliance with the eMMC[tm] and eSD[tm] standards. The embedded devices are designed for application in digital consumer products, including mobile phones, video cameras, HDTV, personal navigation devices, POS terminals, printers, and set-top boxes. The new 32GB embedded devices combine eight 32Gbit (= 4GB) NAND chips fabricated with Toshiba’s cutting-edge 43nm process technology and also integrate a dedicated controller…
TOSHIBA LAUNCHES LARGEST DENSITY EMBEDDED NAND FLASH MEMORY DEVICES
eMMC and eSD Embedded Memories Combine Up To 32GB NAND and Controller in a Single Package
Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC), its subsidiary in the Americas, announced the launch of 32GB embedded NAND flash memory devices that offer the largest density yet announced plus full compliance with the eMMC[tm] and eSD[tm] standards. The embedded devices are designed for application in digital consumer products, including mobile phones, video cameras, HDTV, personal navigation devices, POS terminals, printers, and set-top boxes. Samples will be available in September 2008, and mass production will start in the fourth quarter.