Toshiba Expands TIM5867-8UL ,TIM5867-30UL and TIM7785-60UL , C-Band GaAs FETs for Microwave Digital Radios and Solid State Powe Amplifiers

Wed, Jun 10th, 2009. In Measurement, Instrumentation, RF, Radio, Semiconductor
Advertisement

The Power Added Efficiency enhanced GaAs FETs are targeted for microwave radio s and solid-state power amplifiers (SSPAs). Two new Extended C -Band GaAs FETs for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, the TIM5867-8UL and the TIM5867-30UL, operate in the 5.85 to 6.75 GHz1 range. For satellite solid-state power amplifier (SSPA) applications, Toshiba has added a 60W C-band power amplifier that operate s in the 7.7 to 8.5 GHz range, with higher gain. The TIM7785-60UL has an output power at one-dB gain compression point of 48 dBm (typ.), gain of 7.5dB (typ.) and power efficiency of 36 percent…

C-Band-GaAS-FET
C-Band-GaAS-FET

 

Advertisement

 

technical-spesification 02
technical-spesification 02


Responses are currently closed, but you can trackback from your own site.
Share this article!

    Related posts:

    1. Toshiba Announces C-band TGI 7785-120L, Ku-Band TGI1314-50L and X-Band TGI1011-50-771, Three New Gallium Nitride (GaN) Semiconductor High Electron Mobility Transistors (HEMTs)
    2. Toshiba Expands NAND-Flash-Based Solid State Drives Based on 32nm Multi-Level- Cell NAND Flash Memories
    3. Toshiba Announces MLC NAND Flash Based Solid State Drives (SSDs)
    4. Avago Technologies Announces Five New CoolPAMTM Power Amplifiers (PAs) for Universal Mobile Telecommunications (UMTS) Band Handsets and Datacard Applications
    5. Mitsubishi Electric Develops Gallium Nitride High-Electron Mobility Transistor (GaN HEMT) for 4.0 GHz Band Satellite Applications
    Terms:
    gaas fet amplifier, GaAs FET, gaas transistor, TGI1011-50-771