TowerJazz Announces High Speed SiGe, SOI and RF CMOS Process Design Kits (PDKs)
TowerJazz announced the availability of additional high speed SiGe, SOI and RF CMOS process design kits (PDKs) for its 0.18um process platform. These kits were developed for use with Agilent Technologies’ Advanced Design System (ADS) 2011 software and target cell phone front-end module components such as SOI antenna switches and SiGe power amplifiers as well as high-frequency products for optical networks, automotive, radar, and 60 GHz WiFi, and other high-speed interfaces such as those supporting Light-Peak and Thunderbolt standards. These PDKs are designed to help customers get new products to market faster by providing an accurate and productive work environment for RF CMOS, SiGe MMIC and power amplifier design solutions.
The new ADS design kits are available for SOI-based RF CMOS processes targeting cell phone antenna switch applications, high power SiGe technology targeting power amplifier applications, as well as high-speed SiGe BiCMOS technology with speeds of up to 200GHz (SBC18HA/HXL/H2). ADS 2011 enables multi-technology simulation with multiple PDKs, including modeling of packaging effects for RF module and RF system-in-package circuit co-design. Also included is a power amplifier design library with characterized power cells for use in wireless front-end module applications in cell phones and WiFi devices. The design kits support a complete ADS front-to-back design flow with an embedded TowerJazz Inductor Toolbox and CNEX netlist definitions for layout-versus-schematic support. The new PDKs work seamlessly with ADS 2011, ADS 2009 Update 1 and all prior ADS releases.
More information about SiGe, SOI and RF CMOS Process Design Kits (PDKs) can be found at Tower Jazz Website
