Vishay Expands Family of N-Channel TrenchFET Power MOSFETs in Thermally Enhanced PowerPAK SC-75 Package

Mon, Aug 17th, 2009. In Embedded Device, Power, Semiconductor

Vishay Expands family of n-channel TrenchFET(R) power MOSFETs join the previously released Siliconix SiB414DK (8-V single n-channel power MOSFET) in the thermally enhanced PowerPAK(R) SC-75 package to offer a VDS range from 8 V to 30 V. The devices released include the industry’s first 30-V device in the 1.6-mm by 1.6-mm footprint area (SiB408DK), and a 20-V MOSFET (SiB412DK) with the industry’s lowest on-resistance. On-resistance for the SiB408DK is as low as 40 mO at 10 V, while the SiB412DK offers an on-resistance down to 34 mO at 4.5 V, which is 21 % lower than the closest competing device. Typical applications for the n-channel PowerPAK SC-75 power MOSFETs will include load, PA, and battery switches in portable electronics. The devices will also save space in 1/8th or 1/16th bricks compared to common 3 mm by 3 mm packages. The SiB408DK will also be used for load switching in notebook computers and netbooks. The devices are halogen-free in accordance with IEC 61249-2-21 and are compliant with RoHS Directive. 2002/95/EC. The MOSFETS are 100 % Rg- and UIS-tested…

N-Channel-TrenchFET-Power-MOSFET

N-Channel TrenchFET Power MOSFETs
(Picture: Vishay)

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