Vishay Intertechnology Introduces New 40 V and 60 V n-Channel TrenchFET Power MOSFETs
Vishay Intertechnology introduced new 40 V and 60 V n-channel TrenchFET® power MOSFETs with the industry’s lowest on-resistance and on-resistance times gate charge figures of merit for devices with these voltage ratings in the SO-8 or PowerPAK® SO-8 packages.
The 60 V SiR662DP offers on-resistance of 2.7 mohm at 10 V and 3.5 mohm at 4.5 V, and an FOM of 172.8 mohm-nC at 10 V and 105 mohm-nC at 4.5 V. The device’s on-resistance values at 10 V and 4.5 V are 3.5 % lower and 27 % lower than those of the closest competing MOSFET, respectively, while its FOM is 23 % lower at 10 V and 57 % lower at 4.5 V. These low values will reduce switching losses across the whole operating range of the device.
The 40 V SiR640DP offers on-resistance of 1.7 mohm at 10 V and 2.2 mohm at 4.5 V, and an FOM of 128 mohm-nC at 10 V and 76 mohm-nC at 4.5 V. The device’s on-resistance value at 4.5 V is 4 % lower than the next best competing MOSFET, while its FOM is 15.5 % lower at 4.5 V.
Both devices are built on a new silicon technology utilizing an optimized trench density and a unique gate structure. For designers, their lower on-resistance translates into lower conduction losses for reduced power consumption, especially at heavy loads. Their low FOMs reduce switching losses in high-frequency and switching applications, particularly at light loads and stand-by mode. The devices’ high efficiency allows designers to increase the power density of their systems and/or provide lower power loss, greener solutions.
The SiR662DP and SiR640DP are intended for secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Typical end products will include telecom power supplies, industrial automation and professional gaming systems, uninterruptible power supplies (UPS), and consumer applications.
Both devices are 100 % Rg and UIS tested. They are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.
Samples and production quantities of the SiR662DP and SiR640DP are available now, with lead times of 16 weeks for large orders.
40 V SiR640DP and 60 V n-Channel TrenchFET Power MOSFETs
(Photo from Vishay Website)
More information about TrenchFET Power MOSFETs can be found at Vishay Intertechnology Website
<slug>Vishay’s SiR662DP and SiR640DP n-Channel TrenchFET Power MOSFETs</slug>
