Vishay Introduces the SiZ710DT, the First Asymmetric Dual TrenchFET Power MOSFET
Vishay Intertechnology introduced the SiZ710DT, the first asymmetric dual TrenchFET® power MOSFET in the PowerPAIR® 6 mm by 3.7 mm package to utilize TrenchFET Gen III technology, reducing on-resistance by 43% when compared to previous-generation devices, while offering higher maximum current and enabling increased efficiency. Offering the industry’s lowest on-resistance for this device type, the SiZ710DT combines a low- and high-side MOSFET in one compact device, saving space over using two discrete solutions in dc-to-dc converters.
The SiZ710DT’s specifications allow designers to use one device that is one third smaller than two discrete PowerPAK 1212-8 devices, or two thirds smaller than two discrete SO-8 devices, saving solution cost and space, including the PCB clearance and labeling area in between the two discrete MOSFETs. In addition, replacing SO-8 devices in lower-current and lower-voltage applications can increase efficiency.
The device is 100% Rg and UIS tested, compliant to RoHS directive 2002/95/EC, and halogen-free according to IEC 61249-2-21.
Samples and production quantities of the new SiZ710DT TrenchFET power MOSFET are available now, with lead times of 12 to 14 weeks for larger orders.
SiZ710DT – Asymmetric Dual TrenchFET Power MOSFET
(Photo from Vishay Website)
More information about Asymmetric Dual TrenchFET can be found at Vishay Intertechnology Website
